主管部门: 中国航天科技集团有限公司
主办单位: 中国航天空气动力技术研究院
中国宇航学会
中国宇航出版有限责任公司

碳/碳化硅复合材料静止环境下氧化行为模拟

Simulation of C/SiC Composite Oxidation Behavior in Static Environment

  • 摘要: 碳/碳化硅(C/SiC)复合材料是应用于临近空间高超声速飞行器热防护的一种新型防热材料.国内外通过性能测试较多地研究了材料不同制备工艺对抗烧蚀性的影响,提出的抗烧蚀分析理论模型均基于液态氧化膜.而近期开展的C/SiC复合材料管式炉加热实验和试样微观形貌电镜表征显示:常压下,当温度低于1 696 K时,C/SiC复合材料氧化后表面形成了多孔的固态氧化膜.采用压汞法测试了氧化物孔隙.基于孔隙中的气体扩散行为,结合氧化反应动力学关系,建立了一种新的C/SiC复合材料惰性氧化模型.模型预测值与实验结果吻合良好,表明该惰性氧化模型对氧化膜厚度和质量损失具有较好的预测能力.

     

    Abstract: Carbon/silicon carbon (C/SiC) composite is used as a new type of thermal protection material for near space hypersonic vehicles. The influence of preparation process on ablation resistance has been studied by performance experiments at home and abroad. The traditional theoretical models of ablation resistance are based on liquid oxide film. Recently, the heating experimental results in tubular furnace and microscopic morphology of sample characterized by electron microscopy show that the oxidation of C/SiC composite can form a porous solid oxide film under atmospheric pressure when the temperature is below 1 696 K. The pore characteristics of the outer oxide layer were evaluated by mercury intrusion method. Based on the gas diffusion behavior in the pores and reaction dynamics of oxidation, a new passive oxidation model of C/SiC composite was established. The predicted values of the model are in good agreement with the experimental results, which indicates that the new passive oxidation model has good prediction ability for the thickness of oxidation film and mass loss of material.

     

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